czochralski method การใช้

• Most true synthetic Alexandrite is grown by pulling, known as the Czochralski method.
• When silicon is grown by the Czochralski method, the melt is contained in a silica ( quartz ) crucible.
• He invented a method of applying the Czochralski method to produce extremely pure germanium single crystals used in making greatly improved transistors.
• Bismuth telluride and its solid solutions are good thermoelectric materials at room temperature and therefore suitable for refrigeration applications around 300 K . The Czochralski method has been used to grow single crystalline bismuth telluride compounds.
• He discovered the Czochralski method in 1916, when he accidentally In 1950, Americans Gordon K . Teal and J . B . Little from Bell Labs would use the method to grow single germanium crystals, leading to its use in semiconductor production.
• LGS is a piezoelectric material, with no phase transitions up to its melting point of 1470 癈 . Single crystal LGS can be grown via the Czochralski method, in which crystallization is initiated on a rotating seed crystal lowered into the melt followed by pulling from the melt.